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| VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = = 5600 6500 1370 2160 21.9x103 1.18 0.632 V V A A A V m Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-01 May 04 * * * * * Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDSM, VRSM VDRM, VRRM dV/dtcrit Parameter Conditions f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms Exp. to 3750 V, Tvj = 125C Symbol Conditions IDSM IRSM 5STP 12K6500 5STP 12K6200 6500 V 5600 V 6200 V 5300 V 2000 V/s min typ 5STP 12K5800 5800 V 4900 V Characteristic values max 600 600 Unit mA mA Forward leakage current Reverse leakage current VDSM, Tvj = 125C VRSM, Tvj = 125C VDRM/ VRRM are equal to VDSM/ VRSM values up to Tvj = 110C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 60 50 100 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 50 kN, Ta = 25 C min typ max 1.15 45 Air strike distance Da 24 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 12K6500 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 125 C, VD = VR = 0 V tp = 8.3 ms, Tvj = 125 C, VD = VR = 0 V Half sine wave, Tc = 70C min typ max 1370 2160 21.9x10 2.4x10 3 Unit A A A A2s 3 6 23.35x10 2.26x10 min typ max 2.12 1.18 0.632 125 75 600 200 A A2s Unit V V m mA mA mA mA 6 Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT V(T0) rT IH IL Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C IT = 1500 A, Tvj = 125 C IT = 800 A - 2000 A, Tvj= 125 C Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 125 C, ITRM = 1300 A, VD 3750 V, IFG = 2 A, tr = 0.5 s Cont. f = 50 Hz Cont. f = 1Hz min typ max 250 1000 Unit A/s A/s s Circuit-commutated turn-off tq time Characteristic values Tvj = 125C, ITRM = 800 A, VR = 200 V, diT/dt = -1 A/s, VD 0.67VDRM, dvD/dt = 20V/s 800 Parameter Recovery charge Symbol Conditions Qrr Tvj = 125C, ITRM = 2000 A, VR = 200 V, diT/dt = -1 A/s VD = 0.4VRM, IFG = 2 A, tr = 0.5 s, Tvj = 25 C min 1600 typ max 2600 Unit As Gate turn-on delay time tgd 3 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1069-01 May 04 page 2 of 6 5STP 12K6500 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Average gate power loss Characteristic values Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT IGT VGD IGD Tvj = 25 C Tvj = 25 C VD = 0.4 x VDRM, Tvjmax = 125 C VD = 0.4 x VDRM, Tvjmax = 125C min typ max 12 10 10 Unit V A V see Fig. 9 min typ max 2.6 400 0.3 10 Unit V mA V mA Parameter Gate-trigger voltage Gate-trigger current Gate non-trigger voltage Gate non-trigger current Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min typ max 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 45...60 kN Anode-side cooled Fm = 45...60 kN Cathode-side cooled Fm = 45...60 kN Double-side cooled Fm = 45...60 kN Single-side cooled Fm = 45...60 kN -40 min typ 140 max 11 22 22 2 4 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = R th i (1 - e-t/ i ) i =1 i Rth i(K/kW) i(s) 1 7.347 0.9879 2 2.414 0.0995 3 0.797 0.0157 4 0.447 0.0040 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1069-01 May 04 page 3 of 6 5STP 12K6500 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj IT + CTvj ln(IT +1) + DTvj IT A25 -6 12.00x10 Valid for IT = 200 - 14000 A B25 C25 D25 -6 -3 -3 300.10x10 237.6x10 -5.56x10 VT125 = ATvj + BTvj IT + CTvj ln(IT +1) + DTvj IT Valid for IT = 200 - 14000 A A125 B125 -6 -6 197.70x10 295.90x10 C125 -3 131.10x10 D125 -3 18.70x10 Fig. 2 Max. on-state voltage characteristics Fig. 3 Max. on-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current. Turn-on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1069-01 May 04 page 4 of 6 5STP 12K6500 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1069-01 May 04 page 5 of 6 5STP 12K6500 g g Fig. 12 Device Outline Drawing. Related application notes: Doc. Nr 5SYA2020 5SYA2034 5SYA 2036 Titel Design of RC-Snubber for Phase Control Applications Gate-drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1069-01 May 04 |
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